PURPOSE: To decrease the cross talk between photodetectors in an integration- type photodetector, which is formed by arranging light absorbing layers for two wavelengths on the same straight line and photodetectors integrating by an laser-irradiation organic metal epitaxy method.
CONSTITUTION: A wavelength filter region 40, which absorbs the light of a first wavelength and transmits a second wavelength, is provided between a first photodetector 39, which absorbs the light of the first wavelength, and a second photodetector 41, which absorbs the second wavelength. The first photodetector 39 which absorbs the first wavelength, and the second photodetector 41 which absorbs the second wavelength, are not arranged on the same straight line. The waveguide for connecting two photodetectors 39 and 41 is formed of the semiconductor 40, which absorbs the first wavelength.
YAMADA TAKESHI
IGA RYUZO
SUGIURA HIDEO
NAGANUMA MITSURU