Title:
INTERFACE GATE DEVICE
Document Type and Number:
Japanese Patent JPH01111377
Kind Code:
A
Abstract:
PURPOSE:To increase a switching speed by a method wherein a gate part of a field-effect transistor is formed by a grain boundary or an interface between two substances. CONSTITUTION:For example, a polycrystalline Si layer or the like not containing an impurity is formed on a gate insulating film 4; after that, a gate substance (1) 5 and a gate substance (2) 6 whose interface 7 has been formed by using a grain boundary in its central part are formed by an electron beam annealing operation or the like; an impurity is diffused from the surface in order to make the interface 7 preferentially conductive, or the gate substance (1) 5 is used as an Si film and the gate substance (2) 6 is used as in SiO2 film in order to form the interface 7. Then, the impurity is diffused from the surface and the interface 7 is made preferentially conductive or the like; a field-effect transistor where a width of the interface is made a gate length is formed. By this setup, the field-effect transistor having an extremely short gate length can be obtained; a switching speed can be increased.
Inventors:
IWAMATSU SEIICHI
Application Number:
JP26959187A
Publication Date:
April 28, 1989
Filing Date:
October 26, 1987
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L29/78; H01L21/337; H01L29/80; H01L29/808; (IPC1-7): H01L29/78; H01L29/80
Attorney, Agent or Firm:
Mogami (1 person outside)