PURPOSE: To obtain a minute interference pattern by performing the exposure by an interference exposure method using a multilayer resist by transcribing a grid pattern, which is formed by developping an upper resist, on a lower resist.
CONSTITUTION: A lower layer resist 6 consisting of a light absorbing resist is formed on a substrate 2, and an upper layer resist 5 is formed on a lower layer resist 6. If performing interference exposure using such a double-layer resist, since the interference between the incident light and the reflected light does not occur, the contrast distribution in the upper layer resist 5 to do exposure is reduced, and the upper layer resist 5 of high contrast can be made. Accordingly, by developping the upper layer resist 5 an upper layer resist pattern of high aspect ratio can be formed. Thereafter, the upper layer resist pattern is transcribed on the lower resist 6, and a submicron fine pattern high in aspect ratio can be formed.
TAMAMURA TOSHIAKI
NAKAO MASASHI
