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Title:
【発明の名称】交差電磁界増幅管
Document Type and Number:
Japanese Patent JPH0628138
Kind Code:
B2
Abstract:
The cathode and tube of this invention comprise a secondary emission semiconductor cathode in a crossed-field high power amplifier. A gallium arsenide semiconductor doped with an impurity to make it more conductive than intrinsic gallium arsenide has been found to perform better than prior art secondary emission cathodes when it is incorporated as a cathode in a high-power crossed-field amplifier tube operating at high average and peak current. With a gallium arsenide cathode, the crossed-field amplifier tube exhibits a radio frequency output pulse which has fast rise time and much reduced leading-edge jitter relative to performance of the same cross-field amplifier tube having a conventional secondary emission cathode.

Inventors:
JOOJI ETSUCHI MATSUKUMASUTAA
ROORENSU JEI NIKORASU
Application Number:
JP2003586A
Publication Date:
April 13, 1994
Filing Date:
January 31, 1986
Export Citation:
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Assignee:
RAYTHEON CO
International Classes:
H01J23/04; H01J1/32; H01J23/05; H01J25/50; H03F3/54; (IPC1-7): H01J23/05; H01J1/32; H01J25/50; H03F3/54
Domestic Patent References:
JP5128477A
JP4319471B1
Attorney, Agent or Firm:
Kyozo Yuasa (4 outside)