Title:
【発明の名称】絶縁ゲートバイポーラトランジスタ
Document Type and Number:
Japanese Patent JP3085037
Kind Code:
B2
Abstract:
In a collector side portion of an insulated gate bipolar transistor, there are provided, for example, a p-type collector layer diffused into an n-type semiconductor region, an n-type carrier extraction layer diffused into the semiconductor region opposite to an emitter side portion and a field effect transistor portion having an auxiliary gate disposed between the collector layer and the carrier extraction layer. The field effect transistor portion is controlled by the auxiliary gate in such a manner that during its "off" state the collector layer is separated from the carrier extraction layer connected to a collector terminal to cause its potential to float so that the majority carriers flowing in a transverse direction below the collector layer prevent minority carriers from being injected from the collector layer into the semiconductor region, thereby shortening the "off" operation time.
Inventors:
Hitoshi Sumita
Application Number:
JP20350993A
Publication Date:
September 04, 2000
Filing Date:
August 18, 1993
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L29/739; H02M7/538; H03K17/567; (IPC1-7): H01L29/78
Domestic Patent References:
| JP4103175A | ||||
| JP418763A | ||||
| JP3148873A | ||||
| JP1253278A | ||||
| JP1146366A |
Attorney, Agent or Firm:
Masaharu Shinobe