To effectively avoid inverse surge between a reference potential terminal of a signal for driving a high potential side IGBT and a reference potential terminal of a gate drive IC even in an inverter apparatus which feeds a large current to a power module.

An inverter apparatus comprises: an IGBT module 113 having a high potential side IGBT 121 and a low potential side IGBT 123; a gate drive IC 101 for driving the high potential side IGBT 121 and the low potential side IGBT 123; a capacitor 128 provided between a reference potential terminal 106 for high potential side IGBT driving signal of the gate drive IC 101 a collector terminal 117 of the low potential side IGBT 123; and a resistor 127 provided between the reference potential terminal 106 for high potential side IGBT driving signal of the gate drive IC 101 and an emitter terminal 116 of the high potential side IGBT 121.