Title:
INVERTER CIRCUIT AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023162321
Kind Code:
A
Abstract:
To provide a semiconductor device having a circuit whose area is reduced, and a semiconductor device having a circuit capable of reducing variations in a power supply voltage.SOLUTION: A semiconductor device 500 includes: a first transistor 491; a second transistor 490; first power supply wiring (low power supply wiring 482); and second power supply wiring (high power supply wiring 480). The second transistor and the first transistor are stacked. The second power supply wiring and the first power supply wiring are stacked. At least part of the second power supply wiring and the first power supply wiring are overlapped with each other. The second power supply wiring and the first power supply wiring are substantially parallel to each other. A source electrode of the first transistor is electrically connected to the first power supply wiring. A source electrode of the second transistor is electrically connected to the second power supply wiring. The second transistor is an n-channel type and a channel formation region is formed by an oxide semiconductor. The first transistor is a p-channel type and the channel formation region is formed by silicon.SELECTED DRAWING: Figure 1
Inventors:
KATO KIYOSHI
Application Number:
JP2023136895A
Publication Date:
November 08, 2023
Filing Date:
August 25, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/8238; H01L21/82; H01L21/822; H01L27/00; H01L27/088; H01L29/786; H10B12/00; H10B41/70; H10B99/00
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