Title:
ION BEAM ACCUMULATION
Document Type and Number:
Japanese Patent JPS583221
Kind Code:
A
Abstract:
PURPOSE:To form a low-doped semiconductor crystal layer having a few crystal defect by performing sputter milling before an ion beam accumulation process. CONSTITUTION:Prior to an ion beam accumulation process, ion beams 2 provided with energy generating sputter milling effect are aimed at the surface of a substrate 1 and the removal of sputter milling is applied to the impurities 3 existing on the shallow surface of the substrate 1 and those 4 adhered to the surface. After washing the surface of the substrate, the temperature of the substrate 1 is successively raised up to a temperature suitable for accumulation and then the voltage used for the sputter milling process is gradually decreased and the energy of the ion beams 2 is reduced without exposing the substrate in air to perform a process for ion beam accumulation on the substrate 1. This forms a layer with high purity and good insulating dielectric strength.
Inventors:
FURUMURA YUUJI
TAKAGI MIKIO
MAEDA MAMORU
TAKAGI MIKIO
MAEDA MAMORU
Application Number:
JP10110681A
Publication Date:
January 10, 1983
Filing Date:
June 29, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/285; H01L21/203; (IPC1-7): H01L21/26; H01L21/285
Attorney, Agent or Firm:
Koshiro Matsuoka
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