Title:
ION BEAM SPUTTERING DEPOSITION SYSTEM
Document Type and Number:
Japanese Patent JP3151445
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an ion beam sputtering system capable of forming a laminated structure improved in the uniformity of the physical characteristics and thickness of each layer on a wafer substrate.
SOLUTION: In an ion beam sputtering system having a vacuum chamber 522, an ion beam source 521, a plurality of targets 523, a shutter 510 and a substrate stage for fixing and holding a wafer substrate in the process of ion beam sputtering deposition in a vacuum chamber, the substrate stage is tilted with the vertical axis as the center in such a manner that flux from the targets strikes against the wafer substrate at a nonvertical angle, by which the physical, electrical and magnetic properties and thickness of the thin film deposited on the substrate improve.
Inventors:
Mustafa Pinarbashi
Application Number:
JP15325599A
Publication Date:
April 03, 2001
Filing Date:
June 01, 1999
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
C23C14/04; C23C14/34; C23C14/46; H01F41/18; G11B5/39; H01F10/08; H01F10/32; H01J37/317; H01L21/203; H01L43/12; G11B5/31; (IPC1-7): C23C14/34; H01F41/18; H01L43/12
Domestic Patent References:
| JP6333564A | ||||
| JP1205071A | ||||
| JP63195264A | ||||
| JP6158294A |
Other References:
（社）表面技術協会編「表面技術便覧」（平１０−２−２７）日刊工業新聞社ｐ．１３１９
金原編「薄膜＜その機能と応用＞」（平３−４−２０）日本規格協会ｐ．２５７−２６５
金原編「薄膜＜その機能と応用＞」（平３−４−２０）日本規格協会ｐ．２５７−２６５
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)