PURPOSE: To provide an ion implantation apparatus of which workability of implantation to plural wafers is enhanced, by arranging plural ion beam irradiation parts so as to encircle a cylindrical target having plural wafer support orifices.
CONSTITUTION: Plural wafer support orifices 4 are formed to the wafer support surfaces of a cylindrical target 3 and this target 3 is supported so as to be rotatable and parallely movable. Around this cylindrical target 3, plural ion beam irradiation parts consisting of ion sources 1 and analyzing parts 2 having same performances are arranged so as to provide equal distances from the wafer support surfaces of the cylindrical target 3. By this apparatus, uniform ion implantation can be carried out against the wafers held by plural support orifices 4 in such a condition that the cylindrical target 3 is rotated and moved to left and right or up and down.
OONISHI TOYOICHI
HIRAMATSU TSUNEO
ISHIDA TOSHIAKI
| JPS51111482A | 1976-10-01 |