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Patent Searching and Data


Title:
ION IMPLANTATION DEVICE
Document Type and Number:
Japanese Patent JP02045921
Kind Code:
A
Abstract:

PURPOSE: To effect ion implantation also for the rear of a wafer by rotating the whole of a platen of an ion implantation device or the platen and a wafer holder by providing a through-hole through the platen and further providing a rotary shaft on the platen or on the wafer holder.

CONSTITUTION: An implantation chamber 2 of an ion implantation device includes a wafer holder 7 with a rotary shaft, and a platen 8 having a through- hole 9 therethrough. A wafer 1 carried from a pre-chamber is placed on the platen 8 and is held by the holder 7, permitting an edge portion thereof to be fixed. Upon ion implantation for the rear of the wafer 1, the platen 8 and the whole of the holder are rotated 180° by a platen reversing rotary shaft fixed to the platen 8 and the holder 7. The second rotary shaft 13 for implantation for the rear is located at a position of the first rotary shaft 11, and the device is operated through the shaft 13 to ion implant the back surface of the wafer.


Inventors:
Sugiyama, Toshiaki
Application Number:
JP1988000196953
Publication Date:
February 15, 1990
Filing Date:
August 05, 1988
Export Citation:
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Assignee:
NEC YAMAGUCHI LTD
International Classes:
H01J37/317; H01L21/265; H01L21/322; H01L21/673; H01L21/68; H01J37/317; H01L21/02; H01L21/67; (IPC1-7): H01J37/317; H01L21/265; H01L21/322; H01L21/68