PURPOSE: To uniformize ion implantation by coating a region for ion implantation of an upper face and a side face of an ion implantation mask pattern and an insulation target wafer by a thin conductor layer and integrating them to prevent electric charging on the surface of the wafer.

CONSTITUTION: A mask pattern 4 is formed on the surface of the insulation target wafer 1 and the integrated conductor thin film 5 is formed on the upper face and at least one side face and the surface of the ion implantation layer 3 to implant ions 2. In this case, the thin film 5 is connected to the ground to neutralize the electric charges stored on the wafer surface to uniformize the ion dosing quantity and ion implantation.