PURPOSE: To control the current quantity and current density distribution of an ion beam by providing an extracting electrode control mechanism capable of automatically adjusting the position of a beam extracting electrode, and adjusting the distance between an arc chamber and a beam extracting electrode.
CONSTITUTION: Ions radiated into an ion implantation chamber 5 are implanted into wafers 28 to be processed mounted on a rotary disk 6 provided in the ion implantation chamber 5. An ion beam measuring means 7 measuring the current quantity and current density distribution of an ion beam 11b is arranged below the rotary disk 6 corresponding to the position where the ion beam 11b is radiated. The measured data obtained by the ion beam measuring means 7 are received and processed by a control means 10, and the drive of an extracting electrode driving means 8 is controlled based on them. The distance between an arc chamber 2 and an extracting electrode 3 is adjusted, and the ion beams 11a, 11b are corrected.
NAITO KATSUO
SHONO KAZUHIRO
NAKANISHI TETSUYA
FUJISHITA NAOMITSU
NOGUCHI KAZUHIKO
SASAKI SHIGEO
KATO SUSUMU
MITSUBISHI ELECTRIC CORP
| JPH01144967A | 1989-06-07 | |||
| JPH03219544A | 1991-09-26 |