Title:
ION IMPLANTING DEVICE AND ION IMPLANTING METHOD
Document Type and Number:
Japanese Patent JP3599373
Kind Code:
B2
Abstract:
PURPOSE: To provide an ion implanting device which can implant the ions to a material such as a semiconductor wafer, in a good yield, without generating a charge on the surface of the material to be implanted.
CONSTITUTION: An ion implanting device implants the ions to a material 7 to be implanted by implanting the ions from an ion source 1 to the implanted material 7 as an ion beam. At the opposite side of the surface of the implanted material 7 where the ion beam is radiated, a magnetic force generating means 8 is provided. Consequently, the accumulation of the electric charge on the surface of the implanted material can be prevented.
Inventors:
Hiroyuki Hashimoto
Application Number:
JP16708594A
Publication Date:
December 08, 2004
Filing Date:
July 19, 1994
Export Citation:
Assignee:
Canon Inc
International Classes:
C23C14/48; H01J37/02; H01J37/244; H01J37/317; H01L21/265; (IPC1-7): H01J37/317; C23C14/48; H01J37/244; H01L21/265
Domestic Patent References:
| JP1232653A | ||||
| JP2037656A | ||||
| JP3219545A | ||||
| JP4033246A | ||||
| JP4337237A | ||||
| JP5135731A | ||||
| JP5343027A | ||||
| JP6061166A | ||||
| JP7045232A |
Attorney, Agent or Firm:
Akio Miyazaki
Nobuyuki Kaneda
Katsuhiro Ito
Ishibashi Masayuki
Nobuyuki Kaneda
Katsuhiro Ito
Ishibashi Masayuki
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