Title:
ION IMPLANTOR
Document Type and Number:
Japanese Patent JPH05128995
Kind Code:
A
Abstract:
PURPOSE: To reduce the electrostatic breakdown rate of semiconductor elements by suppressing electrostatic charge on a semiconductor wafer all over the surface.
CONSTITUTION: A photocoupler 21 to detect the position of a semiconductor wafer 4 in an irradiation area of ion beams is provided on a disc 2 on which the semiconductor wafer 4 is placed. A power supply 23 to elevate a negative voltage when the central portion of the wafer 4 is brought to nearly center of the ion beams is connected to a lower suppressor 8. Thereby when the central portion of the semiconductor wafer 4 is irradiated with ion beams 5, electrons 7a are collected on the central portion of the wafer 4 to neutralize the charge on the wafer 4.
Inventors:
OISHI TAKAYUKI
FUJII HARUHISA
NAKANISHI KOICHIRO
FUJII HARUHISA
NAKANISHI KOICHIRO
Application Number:
JP28761791A
Publication Date:
May 25, 1993
Filing Date:
November 01, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C23C14/48; H01J37/317; H01L21/265; (IPC1-7): C23C14/48; H01J37/317; H01L21/265
Attorney, Agent or Firm:
Mamoru Takada (1 person outside)