Title:
ION INJECTION APPARATUS
Document Type and Number:
Japanese Patent JP3732697
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a cleaning method able to safely carry out source maintenance by minimizing generation of HF gas, although outside air enters into a source housing by opening thereof.
SOLUTION: When emitting a beam using fluoride compound gas, fluoride compound, which is deposited on an inner surface of source mount flange and a source housing, produces poisonous and corrosive HF gas by reacting with moisture of the air in the case the air enters into the source housing. However, since HF gas is generated from the fluoride compound by contacting the air and the fluoride compound, absolute amount of fluoride is decreased. An introducing path of the air or a discharge system is provided at the inner surface of source mounting flange, within the source housing, or at ion beam line, whereby the introduction of open air is performed after work, while HF gas, which is produced by the reaction of the deposited fluoride compound with active gas such as water in the open air, is forcibly eliminated while discharged by the discharge system.
Inventors:
Hiroyuki Muto
Koji Ishikawa
Koji Ishikawa
Application Number:
JP34976299A
Publication Date:
January 05, 2006
Filing Date:
December 09, 1999
Export Citation:
Assignee:
Sumitomo Eaton Nova Co., Ltd.
International Classes:
H01J37/317; C23C14/48; H01L21/265; (IPC1-7): H01J37/317; C23C14/48; H01L21/265
Domestic Patent References:
| JP5082072A | ||||
| JP7326320A | ||||
| JP62047939A | ||||
| JP2001167707A |
Attorney, Agent or Firm:
Kenho Ikeda