Title:
ION IRRADIATION
Document Type and Number:
Japanese Patent JPS5586119
Kind Code:
A
Abstract:
PURPOSE:To carry out a tapered etching by a method wherein a cross electromagnetic field along an annular slit limited by an electrode is induced, a plasma is generated to ion irradiation, during which an incident angle of ion is changed. CONSTITUTION:An annular slit 20 of a box-type plate 19 is provided with rectangular beam extracting ports 21a, 21b, and a beam 23 is released deflectively left and right at equal angles to irradiate an object 24 to etch. A numerical symbol 22 indicates a permanent magnet. C2F6 is introduced in a vessel and where a high voltage is impressed between anode 27 and cathode 19, there produced is a cross electromagnetic field near the slit 20, a plasma is produced along the slit, and thus two rectangular reactive ion beam fluxes having mutually reverse components are released from the holes 21a, 21b. The object to etch is rotated in the plane and the beam fluxes are scanned simultaneously in the short side direction to unify irradiation. A sharply tapered mesa type pattern is obtained from impressing high voltage, and a gently tapered one is obtained from impressing lower voltage.
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Inventors:
HORIIKE YASUHIRO
YAMAZAKI TAKASHI
YAMAZAKI TAKASHI
Application Number:
JP15870678A
Publication Date:
June 28, 1980
Filing Date:
December 25, 1978
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302