Title:
ION PLATING DEVICE AND METHOD FOR CONTROLLING THICKNESS AND COMPOSITION DISTRIBUTION OF VAPOR DEPOSITED FILM FORMED BY ION PLATING
Document Type and Number:
Japanese Patent JP3464998
Kind Code:
B2
Abstract:
PURPOSE: To provide the ion plating device and method capable of forming films at an arbitrary film thickness distribution without impairment of the deposition efficiency of a film forming material on an object to be treated and forming films having a uniform compsn. in the case of compd. films by oscillating electron beam to the arbitrary position of the film forming material and irradiating the material with these electron beams and arbitrarily controlling the distributions of ions of materials to be evaporated, reactive gas ions and plasma.
CONSTITUTION: The device for executing ion plating by applying a DC bias by the electron beams 9 controlled by converging coils 7, 8, 13 is provided with plural pieces of electron beam generators 5 and a power source 14 for respectively independently generating the electron beam from these electron beam generators is connected to the respective electron beam generators. As a result, arbitrary magnetic fields are formed on the surface to be deposited of the object to be deposited and simultaneously the arbitrary position of the film forming material is irradiated with the electron beams. The film formation is thus executed with the good deposition efficiency at the arbitrary film thickness distribution. The films having the uniform compsn. are formed in the case of the compd. films.
Inventors:
Natsuki Takahashi
Hideyuki Hiraiwa
Yukio Iguchi
Hideyuki Hiraiwa
Yukio Iguchi
Application Number:
JP5262593A
Publication Date:
November 10, 2003
Filing Date:
March 12, 1993
Export Citation:
Assignee:
ULVAC, Inc.
JFE Steel Corporation
JFE Steel Corporation
International Classes:
C23C14/32; C23C14/54; (IPC1-7): C23C14/32; C23C14/54
Domestic Patent References:
| JP4365854A | ||||
| JP6347362A |
Attorney, Agent or Firm:
Kinichi Kitamura (2 others)