Title:
イオン伝導性アセンブリおよびその作製方法
Document Type and Number:
Japanese Patent JP2022527038
Kind Code:
A
Abstract:
本発明は、概して、イオン伝導性アセンブリおよび電極からなるエネルギー貯蔵システムに関する。
Inventors:
Abteu, Esther
Bernstein, Delon
Rank ski, Anika
Shriver, Elez
Bernstein, Delon
Rank ski, Anika
Shriver, Elez
Application Number:
JP2022504748A
Publication Date:
May 27, 2022
Filing Date:
March 25, 2020
Export Citation:
Assignee:
3DBATTERIES LTD.
International Classes:
H01M10/052; H01M4/13; H01M4/131; H01M4/133; H01M4/134; H01M4/136; H01M4/36; H01M4/38; H01M4/40; H01M4/46; H01M4/48; H01M4/505; H01M4/525; H01M4/56; H01M4/58; H01M4/583; H01M4/587; H01M4/62; H01M6/14; H01M10/054; H01M10/0566; H01M50/409; H01M50/414; H01M50/434; H01M50/443; H01M50/446; H01M50/491; H01M50/489
Attorney, Agent or Firm:
Hiroshi Higuchi