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Title:
電離放射線及び電離粒子の集積センサ
Document Type and Number:
Japanese Patent JP7370323
Kind Code:
B2
Abstract:
This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.

Inventors:
Ribetti, Angelo
Pancheri, Lucio
Diubirat, clown
Da Loca Loro, Manuel Dionisio
Margutti, Giovanni
di cola, honorato
Application Number:
JP2020523423A
Publication Date:
October 27, 2023
Filing Date:
October 22, 2018
Export Citation:
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Assignee:
Elle Foundry Esse Elle Elle.
International Classes:
H01L27/146; G01T1/24; H01L31/10
Domestic Patent References:
JP2016009691A
JP2015177191A
JP2015118989A
JP61502854A
JP2010056345A
JP2007527500A
Foreign References:
US6249033
US5465002
US20130037899
US20050173733
US20160260861
WO2013129559A1
Other References:
H. Pernegger,外13名,First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors,Journal of Instrumentation,英国,IOP Publishing for Sissa Medialab,2017年06月07日,Vol. 12,P06008
G. Lutz,Silicon radiation detectors,Nuclear Instruments and Methods in Physics Research Section A,NL,Elsevier Science B.V.,1995年,Vol. 367,p. 21-33
Attorney, Agent or Firm:
Patent Attorney Corporation Asamura Patent Office