Title:
IRON SILICIDE FILM FORMING METHOD, SEMICONDUCTOR WAFER AND OPTICAL SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002324765
Kind Code:
A
Abstract:
To provide an iron silicide film forming method, a semiconductor wafer and an optical semiconductor device for forming a thick and continuous β-FeSi2 film having a good quality.
The method of forming an iron silicide film layer 4 or β-FeSi2 on an Si wafer 1 having a crystal plane (001) on the surface comprises an SiGe layer forming step of epitaxially growing an SiGe layer 2 on the Si wafer, and an iron silicide layer forming step of epitaxially growing the iron silicide layer on the SiGe layer.
Inventors:
YAMAGUCHI KENJI
MIZUSHIMA KAZUKI
MIZUSHIMA KAZUKI
Application Number:
JP2001127742A
Publication Date:
November 08, 2002
Filing Date:
April 25, 2001
Export Citation:
Assignee:
MITSUBISHI MATERIAL SILICON
MITSUBISHI MATERIALS CORP
MITSUBISHI MATERIALS CORP
International Classes:
C30B29/52; H01L21/205; H01L21/28; H01L31/04; (IPC1-7): H01L21/28; C30B29/52; H01L21/205; H01L31/04
Attorney, Agent or Firm:
Masatake Shiga (6 people outside)