To provide a jointing method of silicon wafers, which pauses no risk of without flaking at jointing interface, by preventing voids when silicon substrates are jointed.
When a first silicon substrate 1 having a circuit element 3 formed thereon and a second silicon substrate 11 as a base stage are overlapped and jointed, a diffusion preventive layer 4 made of a metal thin film containing at least one of Ni, Cr, W and Al for preventing diffusion of Au is formed on the first silicon substrate 1. An Au layer 5 is formed thereon. An Sn layer 13 is formed on the second silicon substrate 11. The Au layer 5 of the first silicon substrate 1, the Sn layer 13 of the second silicon substrate 11 are overlapped and a prescribed load is applied thereto at temperatures of 300 to 400°C to joint the silicon substrates 1 and 11 through alloy junction.
AKAI SUMIO
KATAOKA KAZUSHI
