Title:
JOSEPHSON JUNCTION AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS6464378
Kind Code:
A
Abstract:
PURPOSE:To manufacture junctions of different current densities inside an identical substrate by a method wherein a niobium(Nb) layer and a tantalum(Ta) or tungsten(w) or vanadium(v) layer are deposited in succession on the substrate, an oxide film to be used as a barrier layer after oxidation of the surface is formed, a niobium layer is deposited on the barrier layer so that a Josephson junction can be formed. CONSTITUTION:An Nb lower-part electrode 2 and a Ta layer 3A are deposited in succession on a whole face of an Si substrate 1. The substrate is taken out to the air from an apparatus; the surface of the Ta layer 3 is oxidized over the whole face of the substrate; a TaOx layer 3A' is formed as a barrier layer. Then, by anodic oxidation by making use of a resist pattern 9 as a mask, the surface of Nb/Ta other than a junction part is oxidized; an anodic oxide film 10 is formed; the TaOx barrier layer 3A' having a size to partition a junction area is left. An Nb layer is deposited on the whole face of the substrate; an anodic oxide film 11 is formed in a part other than a region to be used as an upper-part electrode; the remaining Nb layer is used as an Nb upper-part electrode 4. Then, an SiO2 layer or an SiN layer as an insulating layer 12 is deposited on the whole face of the substrate; a pattern for a contact hole is formed; the contact hole 13 is formed in the insulating layer 12. Lastly, an Nb layer as a wiring layer is deposited on the whole face of the substrate; an Nb wiring layer 8 is formed.
Inventors:
MOROHASHI SHINICHI
Application Number:
JP22221087A
Publication Date:
March 10, 1989
Filing Date:
September 04, 1987
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L39/22; H01L39/24; (IPC1-7): H01L39/22; H01L39/24
Attorney, Agent or Firm:
Sadaichi Igita
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