Title:
LAMINATED STRUCTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02272433
Kind Code:
A
Abstract:
PURPOSE:To obtain the optical nonlinear element which is small in the incident light intensity and incident pulse width necessary for a device operation by determining the compsns. and layer thicknesses of 1st, 2nd and 3rd semiconductor layers in such a manner that the transition energy between the 1st and 2nd sub-bands of the conduction band generated in the 1st semiconductor layer is nearly equal to the transition energy between the 1st sub-bands of the conduction band and the valence band. CONSTITUTION:A graded layer 22 consisting of Inx-Al1-xAs is laminated on an InP substrate 21 by an MBE method and further, an In0.5Al0.5As layer 23 is laminated thereon, on which layer InAs layers 24 and Al As layers 25 are alternately stacked by respectively 5 atomic layers each to 150 periods. An In0.5Al0.5As layer 26 is laminated thereon. The energy between the 1st and 2nd sub-bands of the conduction band in the InAs layer 24 is nearly equaled to the energy between the 1st sub-bands of the conduction band and the valence band by specifying the layer thicknesses of the InAs and the AlAs respectively to about 5 atomic layers.
Inventors:
ANAMI TAKAYOSHI
Application Number:
JP9454689A
Publication Date:
November 07, 1990
Filing Date:
April 13, 1989
Export Citation:
Assignee:
NEC CORP
International Classes:
G02F1/35; G02F1/355; (IPC1-7): G02F1/35
Domestic Patent References:
| JPS5991425A | 1984-05-26 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)