PURPOSE: To meet the requirements for the jig such as the least impurity amount, excellent dimensional precision, evenness in temperature distribution, excellent thermal resistance, no fear of thermal deformation and dusting characteristics by a method wherein a graphite material is removed after evaporating silicon carbide in β phase on the surface of the graphite material.

CONSTITUTION: A graphite material is provided in a recess corresponding to the wafer retaining part 2 of the lamp annealing temperature correcting jig 1. This graphite material is put in an electric furnace so as to be refined by feeding CH2Cl2 gas while being heated. Next, this refined product is put in a CVD furnace to be heated by high-frequency induction process and then the CVD furnace is pressure-reduced and a carrier gas is fed to evaporate high purity β phase silicon carbide. Later, the β phase silicon carbide on whose both surfaces of the silicon carbide is evaporated is put in the electric furnace to be heated for burning and removing the graphite. Through these procedures, the jig can meet the requirements such as non-dusting characteristics, chemical stability, high purity, consumption resistance, thermal deformation resistance, oxidation resistance, etc., also having a merit of causing almost no surface abrasion in time of loading and unloading the wafers.