To solve the problem in the conventional lamp heat treatment apparatus in which an interior of a metal chamber is not sufficiently warmed even if pre-heating is carried out, wherein a heating lamp group is turned on before the heat treatment of a first substrate when a plurality of semiconductor substrates are to be processed successively, so that the thickness of the formed film will be thinner for the first substrate than for the second and subsequent substrates even if pre-heating is carried out.
In the lamp heat treatment apparatus, the heating lamp group has a function to heat not only the semiconductor substrates but also the metal chamber. Thus, the interior of the metal chamber is sufficiently warmed by turning the heating lamp group on to carry out the pre-heating.
Tomoyasu Sakaguchi
Hiroki Naito
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