To provide a lamp heat treatment device which eliminates the difference in the thickness between an oxide film on a first wafer and an oxide film on each of a second and the subsequent wafers, and at the same time prevents warpage or breakage of the first wafer in a continuous processing.
The lamp heat treatment device is provided with a metal chamber which is provided therein with a lamp unit consisting such as a tungsten halogen lamp and the like for serving as a lamp light source, a quartz plate for defining the lamp unit, a support ring made of silicon carbide for horizontally supporting a wafer, a rotary cylinder for mounting the support ring, radiation thermometers disposed at the rear of the wafer, and a cooling gas line or a cooling ring made of silicon carbide for cooling the support ring alone in a short time.
Tomoyasu Sakaguchi
Hiroki Naito
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