Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
LANDING PLUG CONTACT FORMING METHOD OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2006190945
Kind Code:
A
Abstract:

To provide a landing plug contact forming method of a semiconductor element capable of preventing a step between a poly-silicon film and a gate hard mask nitride film in a CMP process for forming a landing plug contact.

In the landing plug contact forming method, an existing CMP process is not used for a poly-silicon recess for isolating the landing plug contact (LPC), but an etch-back process of two steps is used. Namely, in the first etch-back process, a seam of the poly-silicon film generated in a space (an upper part of a contact hole) between gate electrode patterns is removed by isotropic dry-etching (partial etching), and in the second etch-back process, a recipe in which an etching rate is similar between the poly-silicon film and a hard mask nitride film 35 is applied for performing anisotropic dry-etching.


Inventors:
CHOI IK-SOO
HWANG CHANG-YOUN
LEE HONG-GU
Application Number:
JP2005169815A
Publication Date:
July 20, 2006
Filing Date:
June 09, 2005
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
H01L29/417; H01L21/28; H01L21/3065; H01L21/768; H01L21/8242; H01L27/108
Domestic Patent References:
JP2002076304A2002-03-15
JPH07226393A1995-08-22
JPH03196625A1991-08-28
JP2004186703A2004-07-02
JP2002110790A2002-04-12
Attorney, Agent or Firm:
Ichiro Kudo



 
Previous Patent: IMAGE SENSOR DIE

Next Patent: MOS TRANSISTOR HAVING SATURATED CURRENT INSENSIBLE TO TEMPERATURE AND CONSTANT-VOLTAGE GENERATOR USI...