To selectively and efficiently make a predetermined portion of an amorphous semiconductor film into high crystal.
A laser annealing apparatus 100 is provided with a first laser beam source 120 provided with one or more laser beam oscillation sources and used for irradiating a neighboring region Asc of a predetermined region A1 of the amorphous semiconductor film 20 with a first laser beam X to crystallize the region; a second laser beam source 130 provided with one or more laser beam oscillation sources not serving as the laser beam oscillation source of the first laser beam source 120 and irradiating at least one part of the region Asc of the amorphous semiconductor film 20 which is irradiated with the first laser beam X and the predetermined region A1 with a laser beam Y, thereby growing a crystal on the predetermined region A1 starting at a crystal sc generated by irradiation of the first laser beam X without fusing at least one part of the crystal sc; and a relative scanning means 150 for scanning the first and second laser beams X and Y simultaneously or independently for the amorphous semiconductor film 20.
KURAMACHI TERUHIKO
AZUMA KOHEI
Go Sakuma
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