Title:
LASER ANNEALING DEVICE
Document Type and Number:
Japanese Patent JP2020098866
Kind Code:
A
Abstract:
To provide a laser annealing device and a laser annealing method, capable of selectively performing a modification in a region where a crystallized silicon is required, capable of reducing manufacturing cost, and capable of reducing a tact time.SOLUTION: There is provided a laser annealing device that irradiates a region to be modified, in which the modification of an amorphous silicon film is to be performed, with a laser beam to perform a modification by growing a crystallized silicon film in the region to be modified. The laser annealing device includes: a first irradiation unit for irradiating the amorphous silicon film with a first laser beam that forms a seed crystal region; and a second irradiation unit that moves a beam spot of a laser beam irradiated onto the surface of the amorphous silicon film starting from the seed crystal region so as to cover the region to be modified and irradiates a second laser beam performing a modification so that the amorphous silicon film in the region to be modified becomes the crystallized silicon film.SELECTED DRAWING: Figure 1
Inventors:
MIZUMURA MICHINOBU
Application Number:
JP2018236397A
Publication Date:
June 25, 2020
Filing Date:
December 18, 2018
Export Citation:
Assignee:
V TECH CO LTD
International Classes:
H01L21/20; H01L21/268
Attorney, Agent or Firm:
Nissei International Patent Office