Title:
LASER ANNEALING METHOD AND MELTING CRYSTALLIZING METHOD OF SEMICONDUCTOR FILM
Document Type and Number:
Japanese Patent JPH0945632
Kind Code:
A
Abstract:
To anneal a plurality of films to be annealed being formed on the main surface of a substrate in an island shape so that they have the same characteristics.
Spot-shaped laser beams A with the beam size being smaller than the area of a film to be annealed (amorphous silicon thin film 17) are emitted to each of a plurality of films (amorphous silicon thin films 17) formed in an island shape on the main surface of a substrate (a thin-film transistor substrate 10) for a plurality of times, thus annealing (melting-crystallizing) a plurality of films to be annealed (amorphous silicon thin films 17).
Inventors:
KAWAMURA TETSUYA
FURUTA MAMORU
FURUTA MAMORU
Application Number:
JP19846595A
Publication Date:
February 14, 1997
Filing Date:
August 03, 1995
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G02F1/136; G02F1/1368; H01L21/20; H01L21/268; H01L21/336; H01L29/786; (IPC1-7): H01L21/268; G02F1/136; H01L21/20; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)