Title:
MANUFACTURING METHOD OF LASER DIODE, AND LASER DIODE
Document Type and Number:
Japanese Patent JP2022149612
Kind Code:
A
Abstract:
To provide a laser diode of a low oscillation threshold current.SOLUTION: A laser diode comprises an Al containing nitride semiconductor substrate, and a semiconductor laminate part disposed on the nitride semiconductor substrate. The semiconductor laminate part includes: a first conductivity type clad layer disposed on the substrate and including a nitride semiconductor layer of a first conductivity type; a light-emitting layer disposed on the first conductivity type clad layer and formed from a nitride semiconductor including one or more quantum wells; and a second conductivity type clad layer disposed on the light-emitting layer and including a nitride semiconductor layer of a second conductivity type. At least a portion of the semiconductor laminate part is a mesa structure for light resonance and emission and includes a plurality of dislocation lines extending in a crystal orientation <1-100> direction of the nitride semiconductor substrate only within a first region where a distance L from a side face of the mesa structure is shorter than 15 μm, in the mesa structure including the first conductivity type clad layer.SELECTED DRAWING: Figure 2
Inventors:
YOSHIKAWA AKIRA
ZHANG ZIYI
KUSHIMOTO MAKI
SASAOKA CHIAKI
AMANO HIROSHI
ZHANG ZIYI
KUSHIMOTO MAKI
SASAOKA CHIAKI
AMANO HIROSHI
Application Number:
JP2021051841A
Publication Date:
October 07, 2022
Filing Date:
March 25, 2021
Export Citation:
Assignee:
ASAHI KASEI CORP
TOKAI NATIONAL HIGHER EDUCATION & RES SYSTEM
TOKAI NATIONAL HIGHER EDUCATION & RES SYSTEM
International Classes:
H01S5/343; H01S5/22
Attorney, Agent or Firm:
田中 秀▲てつ▼
Tetsuya Mori
Tetsuya Mori