Title:
LASER DIODE
Document Type and Number:
Japanese Patent JP3504742
Kind Code:
B2
Abstract:
PURPOSE: To radiate light which is polarized at higher wavelength range than a specific limit by relating to an active layer which includes a III-V alloy grown on a base body, changing the band gap and lattice constant, depending on the presence of an applied distortion, and allowing laser radiation at a wavelength higher than that laser radiation by carrier injection of the base body.
CONSTITUTION: An InGaAsN alloy is utilized as an active layer in a laser structure, surrounded by an AlGaAs layer acting as a barrier wall. On a GaAs base body 20, AlGaAs clad layers 21 and 25 which are epitaxially grown. AlGaAs confinement regions 22 and 23 making contact with an active QW layer 24 of InGaAsN, a mesa-type cap layer 26, and a contact alter 27 are laminated. At the top part and the bottom part, electrodes 28 and 29 for injecting current into the active layer 24 are provided, while a GaAs re-growth layer 30 formed on the side surface of a ridge 26. Various layers other than the active layer 24 have general-purpose thickness. A GaAs etching stop layer is provided between the AlGaAs clad layer 25 and the re-grown layer 30.
Inventors:
Christian van du wall
David P. Bower
David P. Bower
Application Number:
JP25808694A
Publication Date:
March 08, 2004
Filing Date:
October 24, 1994
Export Citation:
Assignee:
XEROX CORPORATION
International Classes:
H01S5/00; H01S5/323; H01S5/343; H01S5/32; H01S5/34; (IPC1-7): H01S5/343
Domestic Patent References:
| JP4215488A |
Other References:
【文献】ワイヤス マークス他,プラズマ-アシストMOVPEによるGaAsN成長,1992年春季第39回応用物理学会物理学会関係連合講演会講演予稿集No.1,第215頁
Attorney, Agent or Firm:
Atsushi Nakajima (1 person outside)