Title:
LASER EXPOSURE DEVICE FOR LITHOGRAPHY
Document Type and Number:
Japanese Patent JP3187735
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the device which enables plotting exposure at a submicron level, such as exposure of a pattern having a 0.3μm line width that corresponds to a 64Mbit DRAM(dynamic random-access memory) having high advanced integration density.
SOLUTION: This device is used for plotting a circuit pattern while projecting the pattern image on a wafer through a quartz glass optical system with a laser of a wavelength in a specific ultraviolet wavelength region selected from the range of about 190 to 300nm and performing the circuit pattern exposure. In the device, as the light source, a light source of an excimer laser of KrF (248nm), XeCl (308nm) or ArF (193nm) is used and also, in the optical system, synthetic quartz glass which has a ≥100ppm OH group concn. in the structure and in which the concn. of each of metallic elements is set to ≤50ppb, is used.
Inventors:
Shigeru Yamagata
Kyoichi Inaki
Toshikatsu Matsutani
Kyoichi Inaki
Toshikatsu Matsutani
Application Number:
JP1588397A
Publication Date:
July 11, 2001
Filing Date:
January 13, 1997
Export Citation:
Assignee:
Shin-Etsu Quartz Products Co., Ltd.
International Classes:
C03C3/06; G03F7/20; H01L21/027; H01S3/08; (IPC1-7): H01L21/027; C03C3/06; G03F7/20; H01S3/08
Other References:
【文献】カタログ「石英ガラス」、信越石英株式会社発行、印刷83.12.30
Attorney, Agent or Firm:
Masahisa Takahashi (1 person outside)