To provide an LPP type extreme ultraviolet light source in which an Sn target can be supplied to a plasma forming part in a high speed and generation of debris can be suppressed and light emission spectrum in the vicinity of 13.5 nm can be made sharp.
A liquid SnH4 supply part 2 has a compression/cooling room 2a to compress the liquid SnH4 and a nozzle part 2b in order to supply the liquid SnH4 into a chamber 1 as liquid droplet or liquid jet. The liquid SnH4 is pressurized in the compression/cooling room 2a and ejected into the chamber 1 as the liquid jet or the liquid droplet from the nozzle part 2b. The ejected liquid jet or the liquid droplet of SnH4 advances in the vacuum, and reach a laser beam irradiation part B. Here, emitted from the laser device 5 and condensed laser beam for plasma generation is irradiated, and the plasma is formed. By this, EUV light of 13.5 nm is obtained.
TAKABAYASHI YUICHI
ABE TAMOTSU
HIRAMOTO TATSUMI
GIGAPHOTON INC
KOMATSU MFG CO LTD
Next Patent: ELECTRICAL CONNECTION TERMINAL AND ELECTRICAL CONNECTOR