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Title:
LASER IRRADIATING DEVICE
Document Type and Number:
Japanese Patent JP2003229377
Kind Code:
A
Abstract:

To provide a semiconductor manufacturing apparatus using a laser crystallizing method which can raise the efficiency of substrate processing.

Of a semiconductor film, a part left behind on a substrate after patterning is grasped in accordance with a mask. A scanning part of a laser beam is specified so that a part obtained by at least patterning can be crystallized, and a beam spot is hit on the scanning part to partially crystallize the semiconductor film. In the beam spot, a part having low output energy is shielded by a slit. The overall semiconductor film is not irradiated with the laser beam for scanning, and the laser beam is scanned so that at least a necessary and essential part is crystallized to a minimum level. With this arrangement, a time of irradiating the laser beam on a part to be removed by patterning after the semiconductor film is crystallized can be omitted.


Inventors:
YAMAZAKI SHUNPEI
OTANI HISASHI
HIROKI MASAAKI
TANAKA KOICHIRO
SHIGA AIKO
MURAKAMI TOMOHITO
AKIBA MAI
Application Number:
JP2002344909A
Publication Date:
August 15, 2003
Filing Date:
November 28, 2002
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/20; H01L21/268; H01L21/336; H01L21/768; H01L21/77; H01L27/32; H01L29/786; H01L51/52; (IPC1-7): H01L21/268; H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
JP2000277450A2000-10-06
JPH05226790A1993-09-03
JPH09270393A1997-10-14
JPH11283933A1999-10-15
JPH07249592A1995-09-26
JPH10199808A1998-07-31
JPH11345783A1999-12-14
JPH09260681A1997-10-03
JPH01239837A1989-09-25



 
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