LASER MARKING METHOD AND ITS DEVICE

Title:

LASER MARKING METHOD AND ITS DEVICE

Document Type and Number:

Japanese Patent JPH1158043

Kind Code:

A

Abstract:

To improve the yield of a semiconductor device by effectively removing particles caused at the time of laser marking on a semiconductor wafer substrate.

In marking by emitting a laser beam 7 to a semiconductor wafer substrate 2, a gas 5 is blown to the marking area at a prescribed flow rate and sucked from the area at the same flow rate, so that a gas flow is generated with a prescribed flow rate near the making area effectively to remove particles 9 caused on in the semiconductor wafer substrate 2. In addition, when the semiconductor wafer substrate 2 is fixed so that its surface is faced downward, and the substrate 2 is irradiated by a laser beam upward from the lower part, the particles can be removed effectively by a smaller amount of the gas flow.

Inventors:

SATO NOBUYOSHI
OSAWA KOJI
HASEGAWA HITOSHI

Application Number:

JP20661497A

Publication Date:

March 02, 1999

Filing Date:

July 31, 1997

Export Citation:

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Assignee:

LSI LOGIC CORP

International Classes:

B23K26/00; B23K26/142; H01L21/00; H01L21/02; (IPC1-7): B23K26/00; B23K26/14; H01L21/02

Attorney, Agent or Firm:

Kazuo Shamoto (5 outside)

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