Title:
LASER PROCESSING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2023129438
Kind Code:
A
Abstract:
To provide a laser processing method and a semiconductor device manufacturing method that can check whether cracks spanning multiple rows of modified regions extend sufficiently toward the surface side of a semiconductor substrate.SOLUTION: An inspection device 10 includes a stage 2 that supports a wafer 20 in which two rows of modified regions 12a and 12b are formed inside a semiconductor substrate 21, a light source 41 that outputs light I1 that is transparent to the semiconductor substrate 21, an objective lens 43 that passes the light I1 propagating through the semiconductor substrate 21, a light detection unit 44 that detects the light I1 that has passed through the objective lens 43, and a control unit that inspects whether a tip 14e of a crack 14b extending from the modified region 12a toward the back surface 21b exists in an inspection region between the modified region 12a and the modified region 12b. The objective lens 43 adjusts the focus F into the inspection region from the back surface 21b side. The light detection unit 44 detects the light I1 propagating through the semiconductor substrate 21 from the front surface 21a side to the back surface 21b side.SELECTED DRAWING: Figure 5
Inventors:
SAKAMOTO TSUYOSHI
SUZUKI YASUTAKA
SANO IKU
SUZUKI YASUTAKA
SANO IKU
Application Number:
JP2023108069A
Publication Date:
September 14, 2023
Filing Date:
June 30, 2023
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
H01L21/301; B23K26/53; H01L21/304
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Yoshiki Kuroki
Kenichi Shibayama