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Title:
【発明の名称】反射性同調可能レーザー
Document Type and Number:
Japanese Patent JP2831583
Kind Code:
B2
Abstract:
A Tunable laser formed on a semiconductive wafer comprising a number of monolithically integrated optical amplifiers and a planar optical multiplexer is disclosed. According to the invention, one of the optical amplifiers is activated by energy, which amplifier produces a signal. The signal is carried along a waveguide associated with the optical amplifier and enters a reflective Dragone router, which is the preferred optical multiplexer. The reflective Dragone router functions, in conjunction with the activated optical amplifier, to define a wavelength selective optically transmissive pathway to create lasing action. Facet mirrors are cleaved in the semiconductive wafer defining the lasing cavity which includes the optical amplifiers, associated waveguides and the reflective Dragone router. The tunable laser includes two reflective surfaces formed in a semiconductive wafer at a position spaced from one another, a first number of waveguides formed in the semiconductive wafer connecting the first reflective surface to a free space region, a wavelength selective device formed in the semiconductive wafer, comprising the free space region and a second number of waveguides, each waveguide having a different length and collectively defining an optical grating connected at one end, to the second reflective surface and at the other end to the free space region. At least two controllable optical amplifiers are formed in at least two of the waveguides of the first number of waveguides. Each optical amplifier has an active state for providing optical gain and a gate state wherein the optical amplifiers are not optically transmissive to the first reflective source. A device selectively provides bias current to one of the optical amplifiers to place one optical amplifier in the active state, where the active optical amplifier, the waveguide in which it is formed and the wavelength selective device define a wavelength selective optically transmissive pathway to generate lasing action.

Inventors:
AIUAN PII KAMINAU
MAACHIN ZAANJIBURU
Application Number:
JP27820394A
Publication Date:
December 02, 1998
Filing Date:
November 14, 1994
Export Citation:
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Assignee:
EI TEI ANDO TEI CORP
International Classes:
H01L33/00; G02B6/34; H01L33/06; H01L33/14; H01L33/30; H01L33/44; H01S5/00; H01S5/026; H01S5/40; H01S5/028; H01S5/14; (IPC1-7): H01S3/18
Domestic Patent References:
JP715092A
JP5327125A
JP55163888A
JP5283784A
JP5107420A
JP6250133A
JP6222408A
JP4268765A
Other References:
1993年電子情報通信学会秋季大会 C−164 p.4−244
IEEE Photonics Technology Lett.4[11](1992)p.1250−1253
IEEE Photonics Technology Lett.5[8](1993)p.908−910
IEEE Photonics Technology Lett.6[4](1994)p.516−518
Attorney, Agent or Firm:
Masao Okabe (2 outside)