To provide an LED device which is excellent in sulfuration resistance characteristics and in which chromaticity of irradiation light is constant for a long period and within a desired range, and to provide a method for manufacturing the same.
A method for manufacturing an LED device including an LED chip 3 which emits light having a wavelength of 400 nm or less, a wavelength conversion unit 6 formed on the LED chip 3, and a transparent resin layer 7 formed on the wavelength conversion unit 6 comprises the steps of: forming a phosphor particle layer by coating a phosphor-containing composition including a red phosphor particle, a swellable particle, an inorganic particle, and a solvent on a light-emitting surface of the LED chip 3; film-forming a wavelength conversion unit 6 in which the red phosphor particle, swellable particle, and inorganic particle are bound by a translucent ceramic by coating a translucent ceramic-containing composition including a translucent ceramic material and a solvent on the phosphor particle layer; and forming the transparent resin layer 7 by coating a composition for the transparent resin layer including a transparent resin on the wavelength conversion unit 6.
| JP2004088013A | 2004-03-18 | |||
| JP2011037913A | 2011-02-24 |
| WO2012067200A1 | 2012-05-24 |
Takashi Kiso
Kazuto Iinuma