LiGaO2 単結晶体,単結晶基板,およびそれらの製造方法 - Nippon Telegraph and Telephone Corporation

Title:

LiGaO2 単結晶体,単結晶基板,およびそれらの製造方法

Document Type and Number:

Japanese Patent JP3549719

Kind Code:

B2

Abstract:

An LiGaO2 single crystal manufactured by the Czochralski method has a crystallographic axis as a pulling direction set within an angle range of 30 DEG from a b- or a-axis direction. An LiGaO2 single-crystal substrate and a method of manufacturing the single crystal and the substrate are also disclosed.

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Inventors:

Takao Ishii
Shintaro Miyazawa
Yasuo Tazuo

Application Number:

JP1538998A

Publication Date:

August 04, 2004

Filing Date:

January 28, 1998

Export Citation:

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Assignee:

Nippon Telegraph and Telephone Corporation

International Classes:

C30B15/36; C30B15/00; C30B29/22; E21B17/02; E21B41/00; H01L33/32; H01S5/00; H01S5/323; (IPC1-7): C30B29/22; C30B15/36

Domestic Patent References:

JP43004052B1
JP10265298A
JP7267782A
JP4175297A
JP50050299A
JP6321680A

Other References:

P.Kung et al.,Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta-LiGaO2 substrates,Applied Physics Letters,1996年 9月30日,Vol. 69, No. 14,pp. 2116-2118

Attorney, Agent or Firm:

Masaki Yamakawa

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