PURPOSE: To obtain a lifetime evaluation method for semiconductor surface in which the lifetime can be evaluated for a wafer having epitaxial structure at the thin semiconductor layer thereof and/or the vicinity thereof and noncontact, nondestructive evaluation of quality can be attained.

CONSTITUTION: The lifetime of a semiconductor wafer having a thin semiconductor layer on the major surface of a semiconductor substrate is evaluated at the thin semiconductor layer and/or the vicinity thereof. In such evaluation method, electron-hole parts are generated in the vicinity of the surface of thin semiconductor layer using an exciting light having energy higher than the bad gap of a semiconductor to be inspected. Intensity of a light emitted through recoupling of electron-hole pair is then detected at a specific wavelength and the lifetime at the thin semiconductor layer and/or the vicinity thereof is evaluated based on the intensity.