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Title:
LIFETIME MEASUREMENT OF SEMICONDUCTOR MATERIAL
Document Type and Number:
Japanese Patent JPH02248061
Kind Code:
A
Abstract:

PURPOSE: To make an effective reflection maximum in intensity so as to improve the measurement of the life time of a semiconductor material in reliability by a method wherein a microwave transmitted through the semiconductor material is reflected by the surface of metal, a distance between the surface of metal and the semiconductor material is obtained to make the influence of the microwave reflected by the surface of metal on the microwave reflected from the semiconductor material minimum, and a non-metal material is interposed between them making its thickness correspondent to the distance concerned.

CONSTITUTION: A microwave received by a microwave transmitting and receiving waveguide 3 is mainly composed of reflected waves from a test semiconductor element material 1 and a metal table 7. Therefore, the distance between the metal table 7 and the material 1 is determined so as to limit the influence of the reflected microwave from the table 7 on the reflected wave from the material 1 to a minimum basing on the phasic relation of the waves. The distance concerned is controlled by the thickness of a quartz glass plate 6. By this setup, the effective reflection of a microwave can be made maximum in intensity, so that the measurement of the life time of a semiconductor element can be improved in accuracy and reliability.


Inventors:
KUSAMA TAKEO
Application Number:
JP1989000068971
Publication Date:
October 03, 1990
Filing Date:
March 20, 1989
Export Citation:
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Assignee:
SEMITETSUKUSU KK
International Classes:
G01R27/00; G01N27/00; H01L21/66; (IPC1-7): G01N27/00; G01R27/00; H01L21/66
Domestic Patent References:
JPS5710571A1982-01-20
JPS61101045A1986-05-19