To provide a light detection device, that has a structure combining a field-emission-type electron source and a photodiode, and can detect correctly two-dimensional distribution of the intensity of light.
A field-emission-type electron source 2 is formed on a sapphire substrate 1. The field-emission-type electron source 2 is composed of a base part 3, comprising a p-type crystalline silicon layer, cone-shaped protrusions 4 comprising n-type crystalline silicon only in the top parts, and an i layer (p-crystalline silicon layer) 5 between the base part 3 and the protrusions 4. Gate electrodes 6 are formed in the surroundings of the protrusions 4, and a prescribed gap is made between the top of a protrusion 4 and a gate electrode 6. This light detection device detects the intensity of light emitted from the side of the sapphire substrate 1, by converting it into the amount of electrons which are emitted from the protrusions 4.
SAWADA KAZUAKI
MORIYASU YOSHITAKA
TEI NAGAAKI
ASAHI KASEI CORP