Title:
LIGHT EMISSION SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5636182
Kind Code:
A
Abstract:
PURPOSE: To limit a light emission region without inserting an etching process halfway, by using a substrate having stripe projections on the surface.
CONSTITUTION: A substrate 15 is etched to make a projection 15A. A clad layer 14, an active layer 13 and another clad layer 12 are then sequentially grown. The growth can be completed by applying a continuous liquid-phase epitaxial growing method. A thickness t1 and another thickness t2 are 0.1∼0.5μm and 0∼1μm, respectively. The thickness of the clad layer 12 and the active layer 13 is 1∼2μm and 0.1∼0.3μm, respectively. The width of the projection 15A of the substrate is 3∼10μm.
Inventors:
YAMAOKA YUTAKA
TAKUSAGAWA KIMITO
AKITA KENZOU
NISHI HIROSHI
YANO MITSUHIRO
TAKUSAGAWA KIMITO
AKITA KENZOU
NISHI HIROSHI
YANO MITSUHIRO
Application Number:
JP11132979A
Publication Date:
April 09, 1981
Filing Date:
August 31, 1979
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/208; H01L33/14; H01L33/30; H01S5/00; H01S5/223; (IPC1-7): H01L21/208; H01L33/00; H01S3/18