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Patent Searching and Data


Title:
発光素子及びその製造方法
Document Type and Number:
Japanese Patent JP7444067
Kind Code:
B2
Abstract:
A semiconductor device comprising: a layered structure 20 configured by layering a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a substrate 11; a first light reflecting layer 41 arranged on the first surface side of the first compound semiconductor layer 21; and a second light reflecting layer 42 arranged on the second surface side of the second compound semiconductor layer 22, wherein the second light reflecting layer 42 has a flat shape; a concave surface portion 12 is formed on a substrate surface 11b; the first light reflecting layer 41 is formed on at least the concave surface portion 12; the first compound semiconductor layer 21 is formed to extend from the substrate surface 11b onto the concave surface portion 12; and a cavity is present between the first light reflecting layer 41 formed on the concave surface portion 12 and the first compound semiconductor layer 21.

Inventors:
Masayuki Tanaka
Kentaro Fujii
Tatsufumi Hamaguchi
Rintaro Koda
Application Number:
JP2020552956A
Publication Date:
March 06, 2024
Filing Date:
September 11, 2019
Export Citation:
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Assignee:
Sony Group Corporation
International Classes:
H01S5/183
Domestic Patent References:
JP2002374045A
JP2018078134A
JP2018010940A
JP2000252584A
JP2002237653A
JP5055713A
JP7259763B2
JP7211362B2
JP7078045B2
Foreign References:
WO2018083877A1
WO2018116596A1
US20070280320
US20020163688
US6026111
Attorney, Agent or Firm:
Patent Attorney Corporation Tsubasa International Patent Office