To provide a light emitting device which is used as a high-efficiency ultraviolet-ray generation source and can greatly be reduced in process cost by employing a conductive substrate, and to provide a method of manufacturing the same.
The light emitting device is characterized in that gallium nitride columnar crystal is formed on a gallium oxide single-crystal substrate. The method of manufacturing the light emitting device includes: a nitriding process of making ammonia flow on the gallium oxide single-crystal substrate under conditions of a temperature of 650 to 750C, a gas flow rate of 80 to 120 sccm, and a time of 1 to 30 minutes to nitride a gallium oxide single-crystal substrate surface; and a process of reacting metal gallium and ammonium on the gallium oxide single-crystal substrate of 800 to 1,000C in surface temperature after the nitriding process to grow the gallium nitride columnar crystal on the gallium oxide single-crystal substrate.
TAKEDA SATOSHI
OHIRA SHIGEO
ARAI NAOKI
UNIV SHIZUOKA NAT UNIV CORP
Mitsue Haba