Title:
発光装置
Document Type and Number:
Japanese Patent JP6676681
Kind Code:
B2
Abstract:
An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.
Inventors:
Hiroyuki Miyake
Application Number:
JP2018037069A
Publication Date:
April 08, 2020
Filing Date:
March 02, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09G3/3233; G09F9/30; G09G3/20; H01L29/786; H01L51/50
Domestic Patent References:
| JP2009063607A | ||||
| JP2009157157A | ||||
| JP2011128626A | ||||
| JP2008522246A | ||||
| JP2011119714A | ||||
| JP2010153828A | ||||
| JP2003224437A | ||||
| JP2007179041A | ||||
| JP2007298973A |
Foreign References:
| US20070052647 |