PURPOSE: To provide a light emitting diode device with a narrow directivity which can be manufactured easily without any scattering of a light emitting pattern.

CONSTITUTION: An n-type substrate 21 is etched in forward mesa shape with a resist 31 as a mask. Then, the resist 31 is eliminated, a center part is eliminated and silicon nitride 32 is formed as shown in Fig. (B), and then n-type first clad layer 22, n-type active layer 23, and p-type second clad layer 24 are successively laminated by the MO CVD method as shown in Fig. (C). After that, resist 33 is applied and the resist 33 on the upper surface (a) of the second clad layer 24 and on an inclined surface (b) in forward mesa shape is eliminated as shown in Fig. (D). Then, metal is deposited and the resist 33 is eliminated by the lift-off method, thus forming a p-type electrode 26 on the upper surface (a) of the second clad layer 24 and a reflection mirror 27 on the oblique surface (b) in forward mesa shape as shown in Fig. (E).