Title:
LIGHT EMITTING DIODE DEVICE WHERE SELECTIVE GROWTH IS APPLIED
Document Type and Number:
Japanese Patent JP3728305
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting diode device where selective growth is applied.
SOLUTION: An oxidation layer is formed on a surface of a substrate. The oxidation layer is patterned and a buffer layer is selectively grown on the oxidation layer by using lateral direction growing technology. An n-type gallium nitride layer, an active layer and a p-type gallium nitride layer are sequentially grown and an electrode is manufactured on the buffer layer so as to complete the light emitting diode device.
Inventors:
Chen Ryuken
Indigo
Simple service
Indigo
Simple service
Application Number:
JP2003296612A
Publication Date:
December 21, 2005
Filing Date:
August 20, 2003
Export Citation:
Assignee:
San Enko Koho Fun Co.
International Classes:
H01L33/12; H01L33/32; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
| JP11261169A | ||||
| JP200351612A | ||||
| JP2001320087A | ||||
| JP2000307184A |
Attorney, Agent or Firm:
Matsuji Takemoto
Hideo Sugiyama
Koichi Yuda
Uozumi Takahiro
Naohiko Teshima
Hideo Sugiyama
Koichi Yuda
Uozumi Takahiro
Naohiko Teshima